A team led by an Indian-origin engineer from the University of Utah has discovered a new kind of 2D semiconducting material for electronics.
This discovery is set to pave the way for much speedier computers and smartphones that consume a lot less power.
The semiconductor, made of the elements tin and oxygen or tin monoxide (SnO) by the associate professor Ashutosh Tiwari-led team is a layer of 2D material only one atom thick, allowing electrical charges to move through it much faster than conventional 3D materials such as silicon.
This material could be used in transistors, the lifeblood of all electronic devices such as computer processors and graphics processors in desktop computers and mobile devices.
Transistors and other components used in electronic devices are currently made of 3D materials such as silicon and consist of multiple layers on a glass substrate.
But the downside to 3D materials is that electrons bounce around inside the layers in all directions.
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